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the allegro? a1363 programmable linear hall-effect current sensor ic has been designed to achieve high accuracy and resolution without compromising bandwidth. the goal is achieved through new proprietary linearly interpolated temperature compensation technology that is programmed at the allegro factory and provides sensitivity and offset that are virtually flat across the full operating temperature range. temperature compensation is done in the digital domain with integrated eeprom technology, without sacrificing the analog signal path 120 khz bandwidth, making this device ideal for hev inverter, dc-to-dc converter, and electric power steering (eps) applications. this ratiometric hall-effect sensor ic provides a voltage output that is proportional to the applied magnetic field. the customer can configure the sensitivity and quiescent (zero field) output voltage through programming on the vcc and output pins, to optimize performance in the end application. the quiescent output voltage is user-adjustable around 50% of the supply voltage, v cc , and the output sensitivity is adjustable within the range of 0.6 to 14 mv/g. the sensor ic incorporates a highly sensitive hall element with a bicmos interface integrated circuit that employs a low noise small-signal high-gain amplifier, a clamped, low-impedance output stage, and a proprietary, high bandwidth dynamic offset ? proprietary segmented linear interpolated temperature compensation (tc) technology provides a typical accuracy of 1% across the full operating temperature range ? customer programmable, high resolution of fset and sensitivity trim ? factory programmed sensitivity and quiescent output voltage tc with extremely stable temperature performance ? high sensitivity hall element for maximum accuracy ? extremely low noise and high resolution achieved via proprietary hall element and low noise amplifier circuits ? 120 khz nominal bandwidth achieved via proprietary packaging and chopper stabilization techniques ? patented circuits suppress ic output spiking during fast current step inputs low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output functional block diagram not to scale a1363lu v+ dynamic offset cancellation eeprom and control logic vcc (programming) gnd vout (programming) signal recovery to all subcircuits c bypass c l temperature sensor offset control sensitivity control programming control continued on the next page continued on the next page package: 8-pin tssop (suffix lu) a1363lu-ds, rev. 4 features and benefits description
2 cancellation technique. these advances in hall-effect technology work together to provide an industry leading sensing resolution at the full 120 khz bandwidth. broken ground wire detection, as well as user-selectable output voltage clamps, are also built into this device, for high reliability in automotive applications. device parameters are specified across the full automotive temperature range: C40c to 150c. the a1363 sensor ic is provided in a low-profile 8-pin surface mount tssop package (thin shrink small outline package, suffix lu) that is lead (pb) free, with 100% matte tin leadframe plating. ? open circuit detection on ground pin (broken wire) ? undervoltage lockout for v cc below specification ? selectable sensitivity range between 0.6 and 14 mv/g through use of coarse sensitivity programming bits ? ratiometric sensitivity , quiescent voltage output, and clamps for interfacing with application a-to-d converter (adc) ? precise recoverability after temperature cycling ? output voltage clamps provide short circuit diagnostic capabilities ? w ide ambient temperature range: C40c to 150c ? immune to mechanical stress ? extremely thin package: 1 mm case thickness ? aec q-100 automotive qualified features and benefits (continued) description (continued) table of contents specifications 2 absolute maximum ratings 3 pin-out diagram and terminal list 3 thermal characteristics 3 operating characteristics 4 characteristic performance data 8 characteristic definitions 12 functional description 17 programming sensitivity and quiescent voltage output 17 coarse sensitivity 17 memory locking mechanisms 17 power-on reset (por) and undervoltage lock-out (uvlo) operation 18 detecting broken ground wire 19 chopper stabilization technique 20 programming serial interface 21 t ransaction types 21 w riting the access code 21 w riting to volatile memory 21 w riting to eeprom 22 reading from eeprom or v olatile memory 22 error checking 22 serial interface reference 23 serial interface message structure 24 v cc levels during manchester communication 24 eeprom cell organization 26 eeprom error checking and correction (ecc) 27 detecting ecc error 27 package drawing 28 selection guide part number packing 1 sensitivity range 2 (mv/g) A1363LLUTR-1-T 4000 pieces per 13-in. reel sens_coarse 00: 0.6 to 1.3 a1363llutr-2-t 4000 pieces per 13-in. reel sens_coarse 01: 1.3 to 2.9 a1363llutr-5-t 4000 pieces per 13-in. reel sens_coarse 10: 2.9 to 6.4 a1363llutr-10-t 4000 pieces per 13-in. reel sens_coarse 11: 6.4 to 14 1 contact allegro for additional packing options 2 allegro recommends against changing coarse sensitivity settings when programming devices that will be used in production. each a1363 has been factory temperature compensated at a specifc sensitivity range and changing coarse bits setting could cause sensi - tivity drift through temperature range ,sens tc , to exceed specifed limits.. low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
3 absolute maximum ratings characteristic symbol notes rating unit forward supply voltage v cc 6 v reverse supply voltage v rcc C0.1 v forward output voltage v out 25 v reverse output voltage v rout C0.1 v output source current i out(source) vout to gnd 2.8 ma output sink current i out(sink) vcc to vout 10 ma maximum number of eeprom write cycles eeprom w (max) 100 cycle operating ambient temperature t a l temperature range C40 to 150 oc storage temperature t stg C65 to 165 oc maximum junction temperature t j (max) 165 oc thermal characteristics may require derating at maximum conditions, see application information characteristic symbol test conditions* value unit package thermal resistance r ja lu package, estimated, on 4-layer pcb based on jedec standard 145 oc/w *additional thermal information available on the allegro website terminal list table number name function 1 gnd ground 2 vout output signal, also used for programming 3, 4, 5, 6, 7 nf no function; do not leave floating, connect to gnd 8 vcc input power supply, use bypass capacitor to connect to ground; also used for programming package lu, 8-pin tssop gnd vout nf nf vcc nf nf nf 1 2 3 4 8 7 6 5 specifications pin-out diagram and terminal list table low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
4 continued on the next page characteristics symbol test conditions min. typ. max. unit 1 electrical characteristics supply voltage v cc 4.5 5.0 5.5 v supply current i cc no load on vout C 10 15 ma power-on time 2 t po t a = 25c, c bypass = open, c l = 1 nf, sens = 2 mv/g, constant magnetic field of 400 g C 78 C s temperature compensation power-on time 2 t tc t a = 150c, c bypass = open, c l = 1 nf, sens = 2 mv/g, constant magnetic field of 400 g C 30 C s undervoltage lockout (uvlo) threshold 2 v uvloh t a = 25c, v cc rising and device function enabled C 3.8 C v v uvlol t a = 25c, v cc falling and device function disabled C 3.3 C v uvlo enable/disable delay time 2 t uvloe t a = 25c, c bypass = open, c l = 1 nf, sens = 2 mv/g, v cc fall time (5 v to 3 v) = 1.5 s C 64 C s t uvlod t a = 25c, c bypass = open, c l = 1 nf, sens = 2 mv/g, v cc recover time (3 v to 5 v) = 1.5 s C 14 C s power-on reset voltage 2 v porh t a = 25c, v cc rising C 2.6 C v v porl t a = 25c, v cc falling C 2.3 C v power-on reset release time 2 t porr t a = 25c, v cc rising C 64 C s supply zener clamp voltage v z t a = 25c, i cc = 30 ma 6.5 7.5 C v internal bandwidth bw i small signal C3 db, c l = 1 nf, t a = 25c C 120 C khz chopping frequency 3 f c t a = 25c C 500 C khz output characteristics propagation delay time 2 t pd t a = 25c, magnetic field step of 400 g, c l = 1 nf, sens = 2 mv/g C 1.9 C s rise time 2 t r t a = 25c, magnetic field step of 400 g, c l = 1 nf, sens = 2 mv/g C 4.3 C s response time 2 t response t a = 25c, magnetic field step of 400 g, c l = 1 nf, sens = 2 mv/g C 3.8 C s delay to clamp 2 t clp t a = 25c, step magnetic field from 800 to 1200 g, c l = 1 nf, sens = 2 mv/g C 10 C s output voltage clamp 4 v clp(high) t a = 25c, r l(pulldwn) = 10 k to gnd 4.55 C 4.85 v v clp(low) t a = 25c, r l(pullup) = 10 k to vcc 0.15 C 0.45 v output saturation voltage 2 v sat(high) t a = 25c, r l(pulldwn) = 10 k to gnd 4.7 C C v v sat(low) t a = 25c, r l(pullup) = 10 k to vcc C C 400 mv broken wire voltage 2 v brk(high) t a = 25c, r l(pullup) = 10 k to vcc C v cc C v v brk(low) t a = 25c, r l(pulldwn) = 10 k to gnd C 100 C mv operating characteristics valid through the full operating temperature range, t a , c bypass = 0.1 f, v cc = 5 v; un- less otherwise specifed low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
5 continued on the next page characteristics symbol test conditions min. typ. max. unit 1 output characteristics (continued) noise 5 v n t a = 25c, cl = 1 nf, bw f = bw i C 1.1 C mg rms / (hz) t a = 25c, cl = 1 nf, sens = 2 mv/g, bw f = bw i C 6.3 C mv p-p t a = 25c, cl = 1 nf, sens = 2 mv/g, bw f = bw i C 1 C mv rms dc output resistance r out t a = 25c, v out = 2.5 v C <1 C output load resistance r l(pullup) vout to vcc 4.7 C C k r l(pulldwn) vout to gnd 4.7 C C k output load capacitance 6 c l vout to gnd C 1 10 nf output slew rate 7 sr sens = 2 mv/g, c l = 1 nf C 230 C v/ms quiescent voltage output (v out(q) ) 2 initial unprogrammed quiescent voltage output 2,8 v out(q)init t a = 25c 2.4 2.5 2.6 v quiescent voltage output programming range 2,4,9 v out(q)pr t a = 25c 2.3 C 2.7 v quiescent voltage output programming bits 10 qvo C 9 C bit average quiescent voltage output programming step size 2,11,12 step vout(q) t a = 25c 1.9 2.3 2.8 mv quiescent voltage output programming resolution 2,13 err pgvout(q) t a = 25c C 0.5 step vout(q) C mv sensitivity (sens) 2 initial unprogrammed sensitivity 8 sens init sens_coarse = 00, t a = 25c C 1 C mv/g sens_coarse = 01, t a = 25c C 2.2 C mv/g sens_coarse = 10, t a = 25c C 4.7 C mv/g sens_coarse = 11, t a = 25c C 9.6 C mv/g sensitivity programming range 4,9 sens pr sens_coarse = 00, t a = 25c 0.6 C 1.3 mv/g sens_coarse = 01, t a = 25c 1.3 C 2.9 mv/g sens_coarse = 10, t a = 25c 2.9 C 6.4 mv/g sens_coarse = 11, t a = 25c 6.4 C 14 mv/g operating characteristics (continued): valid through the full operating temperature range, t a , c bypass = 0.1 f, v cc = 5 v; unless otherwise specifed low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
6 continued on the next page characteristics symbol test conditions min. typ. max. unit 1 sensitivity programming (continued) coarse sensitivity programming bits 14 sens_ coarse C 2 C bit fine sensitivity programming bits 10 sens_fine C 9 C bit average fine sensitivity programming step size 2,11,12 step sens sens_coarse = 00, t a = 25c 2.4 3.2 4.1 v/g sens_coarse = 01, t a = 25c 5 6.6 8.5 v/g sens_coarse = 10, t a = 25c 11 14.2 18 v/g sens_coarse = 11, t a = 25c 22 29 38 v/g sensitivity programming resolution 2,13 err pgsens t a = 25c C 0.5 step sens C v/g factory programmed sensitivity temperature coeffcient sensitivity temperature coefficient 2 tc sens t a =150c, t a = C40c, calculated relative to 25c C 0 C %/c sensitivity drift through temperature range 2,9,15,20 sens tc t a = 25c to 150c C3.5 C 3.5 % t a = C40c to 25c C3.5 C 3.5 % average sensitivity temperature compensation step size step senstc C < 0.3 C % factory programmed quiescent voltage output temperature coeffcient quiescent voltage output temperature coefficient 2 tc qvo t a = 150c, t a = C40c, calculated relative to 25c C 0 C mv/c quiescent voltage output drift through temperature range 2,9,15 v out(q)tc t a = 25c to 150c C15 C 15 mv t a = C40c to 25c C30 C 30 mv average quiescent voltage output temperature compensation step size step qvotc C 2.3 C mv lock bit programming eeprom lock bit eelock C 1 C bit operating characteristics (continued): valid through the full operating temperature range, t a , c bypass = 0.1 f, v cc = 5 v; unless otherwise specifed low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
7 characteristics symbol test conditions min. typ. max. unit 1 error components linearity sensitivity error 2,16 lin err C1 < 0.25 1 % symmetry sensitivity error 2 sym err C1 < 0.25 1 % ratiometry quiescent voltage output error 2,17 rat errvout(q) through supply voltage range (relative to v cc = 5 v) C1 0 1 % ratiometry sensitivity error 2,17 rat errsens through supply voltage range (relative to v cc = 5 v) C2 < 0.5 2 % ratiometry clamp error 2,18 rat errclp through supply voltage range (relative to v cc = 5 v), t a = 25c C < 1.0 C % sensitivity drift due to package hysteresis 2 sens pkg t a = 25c, after temperature cycling, 25c to 150c and back to 25c C C1.5 1.5 C % sensitivity drift over lifetime 19 sens life t a = 25c, shift after aec q100 grade 0 qualification testing C 1 C % 1 1 g (gauss) = 0.1 mt (millitesla). 2 see characteristic defnitions section. 3 f c varies up to approximately 20% over the full operating ambient temperature range, t a , and process. 4 sens, v out(q) , v clp(low) , and v clp(high) scale with v cc due to ratiometry. 5 noise, measured in mv pp and in mv rms , is dependent on the sensitivity of the device. 6 output stability is maintained for capacitive loads as large as 10 nf. 7 high-to-low transition of output voltage is a function of external load components and device sensitivity. 8 raw device characteristic values before any programming. 9 exceeding the specifed ranges will cause sensitivity and quiescent v oltage output drift through the temperature range to deteriorate beyond the specifed values. 10 refer to functional description section. 11 step size is larger than required, in order to provide for manufacturing spread. see characteristic defnitions section. 12 non-ideal behavior in the programming dac can cause the step size at each signifcant bit rollover code to be greater than twice the maximum specifed value of step vout(q) or step sens . 13 overall programming value accuracy. see characteristic defnitions section. 14 each a1363 part number is factory programmed and temperature compensated at a different coarse sensitivity setting. changing coarse bits setting could cause sensitiv- ity drift through temperature range ,sens tc , to exceed specifed limits. 15 allegro tests and temperature compensates each device at 150c. allegro does not test devices at C40c. temperature compensation codes will be applied based on characterization data. 16 linearity applies to output voltage ranges of 2 v from the quiescent output for bidirectional devices. 17 percent change from actual value at v cc = 5 v, for a given temperature, through the supply voltage operating range. 18 percent change from actual value at v cc = 5 v, t a = 25c, through the supply voltage operating range. 19 based on characterization data obtained during standardized stress test for qualifcation of integrated circuits. can not be guaranteed. drift is a function of customer ap - plication conditions. please contact allegro microsystems for further information. 20 includes sensitivity drift due to package hysteresis observed during factory testing. operating characteristics (continued): valid through the full operating temperature range, t a , c bypass = 0.1 f, v cc = 5 v; unless otherwise specifed low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
8 characteristic performance data propaga t on delay (t pd ) 4 00 g excita t on signal with 10%-90% rise t me = 1 s s ensi t vity = 2 mv/g, c bypass =0.1 f, c l =1 nf input = 400 g excitaton signal 20% of input t pd = 1.9 s 20% of output output (v out , mv) response time (t response ) 4 00 g excita t on signal with 10%-90% rise time = 1 s s ensi t vity = 2 mv/g, c bypass =0.1 f, c l =1 nf input = 400 g excitaton signal 80% of input t response = 3.8 s 80% of output output (v out , mv) low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
9 power-on time(t po ) 400 g constant excita t on signal, with v cc 10%- 90% rise t me = 1.5 s sensi t vity = 2 mv/g, c bypass = open, c l =1 nf v cc (min) supply (v cc , v) t po = 78 s 90% of output output (v out , v) rise time (t r ) 4 00 g excita t on signal with 10%-90% rise t me = 1 s s ensi t vity = 2 mv/g, c bypass =0.1 f, c l =1 nf input = 400 g excitaton signal 10% of output t r = 4.3 s 90% of output output (v out , mv) low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
10 v cc (min) supply (v cc , v) t uvlod = 13 s 90% of output output (v out , v) uvlo disable time (t uvlod ) v cc 3 v-5 v recovery tme = 1.5 s sensi t vity = 2 mv/g, c bypass = open, c l =1 nf uvlo enable time (t uvloe ) v cc 5 v-3 v fall tme = 1.5 s s e nsi t vity = 2 m v/g, c bypass = open , c l =1 nf v uvlol supply (v cc , v) t uvloe = 65 s output = 0 v output (v out , v) low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
11 t a (c) -50 3 2 1 0 -1 -2 -3 0 50 100 150 200 sensitvity dri f through temperature range versus ambient temperature ?sens tc (typ), (%) relative to ?sens tc (typ) at t a = 25c t a (c) -50 30 20 10 0 -10 -20 -30 0 50 100 150 200 quiescent voltage output dri f through temperature range versus ambient temperature ?v out(q) tc (typ), (mv) relative to ?v out(q)tc (typ) at t a = 25c low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
12 characteristic definitions power-on time (t po ) when the supply is ramped to its operat- ing voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. power-on time, t po , is defined as: the time it takes for the output voltage to settle within 10% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage, v cc (min), as shown in figure 1. temperature compensation power-on time (t tc ) after power- on time, t po , elapses, t tc is also required before a valid tem- perature compensated output. propagation delay (t pd ) the time interval between a) when the applied magnetic field reaches 20% of its final value, and b) when the output reaches 20% of its final value (see figure 2). rise time (t r ) the time interval between a) when the sensor ic reaches 10% of its final value, and b) when it reaches 90% of its final value (see figure 2). response time (t response ) the time interval between a) when the applied magnetic field reaches 80% of its final value, and b) when the sensor reaches 80% of its output corresponding to the applied magnetic field (see figure 3). delay to clamp (t clp ) a large magnetic input step may cause the clamp to overshoot its steady state value. the delay to clamp, t clp , is defined as: the time it takes for the output voltage to figure 1: power-on t ime defnition figure 2: propagation delay and rise time defnitions figure 3: response time defnition v +t v cc v cc (min.) v out 90% v out 0 t 1 = time at which power supply reaches minimum specified operating voltage t 2 = time at which output voltage settles within 10% of its steady state value under an applied magnetic field t 1 t 2 t po v cc (typ.) applied magnetic field transducer output 90 10 20 0 (%) propagation delay, t pd rise time, t r t applied magnetic field transducer output 80 0 (%) response time, t response t low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
13 settle within 1% of its steady state value, after initially passing through its steady state voltage, as shown in figure 4. quiescent voltage output (v out(q) ) in the quiescent state (no significant magnetic field: b = 0 g), the output, v out(q) , has a constant ratio to the supply voltage, v cc , throughout the entire operating ranges of v cc and ambient temperature, t a . initial unprogrammed quiescent voltage output ( v out(q)init ) before any programming, the quiescent voltage output, v out(q) , has a nominal value of v cc / 2, as shown in figure 5. quiescent voltage output programming range ( v out(q)pr ) the quiescent voltage output, v out(q) , can be programmed within the quiescent voltage output range limits: v out(q)pr (min) and v out(q)pr (max). exceeding the specified quiescent voltage output range will cause quiescent voltage output drift through temperature range v out(q)tc to deteriorate beyond the specified values, as shown in figure 5. average quiescent voltage output programming step size (step vout(q) ) the average quiescent voltage output progam- ming step size, step vout(q) , is determined using the following calculation: v out(q)maxcode ?v out(q)mincode 2 n ?1 step vout(q) = , (1) where n is the number of available programming bits in the trim range, 9 bits, v out(q)maxcode is at decimal code 255, and v out(q) mincode is at decimal code 256. quiescent voltage output programming resolution (err pgvout(q) ) the programming resolution for any device is half of its programming step size. therefore, the typical programming resolution will be: err pgvout(q) (typ) = 0.5 step vout(q) (typ) (2) quiescent voltage output temperature coefficient (tc qvo ) device v out(q) changes as temperature changes, with respect to its programmed quiescent voltage output temperature coef- ficient, tc qvo . tc qvo is programmed at 150c, and calculated relative to the nominal v out(q) programming temperature of 25c. tc qvo (mv/c) is defined as: tc qvo = [v out(q)t2 C v out(q)t1 ][1/(t2-t1)] (3) where t1 is the nominal v out(q) programming temperature of 25c, and t2 is the tc qvo programming temperature of 150c. the expected v out(q) through the full ambient temperature range, v out(q)expected(ta) , is defined as: v out(q)expected(ta) = v out(q)t1 + tc qvo (t a Ct1) (4) v out(q)expected(ta) should be calculated using the actual mea- sured values of v outq)t1 and tc qvo rather than programming target values. quiescent voltage output drift through temperature range (v out(q)tc ) due to internal component tolerances and thermal figure 4: delay to clamp defnition figure 5: quiescent voltage output range defnition v t magnetic input v out 0 t 1 = time at which output voltage initially reaches steady state clamp voltage t 2 = time at which output voltage settles to within 1% of steady state clamp voltage note: times apply to both high clamp (shown) and low clamp. v clp(high) t 1 t 2 t clp v out(q)pr (max) value v out(q)pr (min) value v out(q) typical initial value before customer programming v out(q)init (qvo programming bits set to code 0) programming range (specified limits) distribution of values resulting from minimum programming code (qvo programming bits set to decimal code 256) distribution of values resulting from maximum programming code (qvo programming bits set to decimal code 255) low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
14 considerations, the quiescent voltage output, v out(q) , may drift from its nominal value through the operating ambient tempera- ture, t a . the quiescent voltage output drift through tempera - ture range, vout(q)tc , is defined as: ?v out(q)tc v out(q)(ta) ?v out(q)expected(ta) = (5) ?v out(q)tc should be calculated using the actual measured values of ?v out(q)(ta) and ?v out(q)expected(ta) rather than programming target values. sensitivity (sens) the presence of a south polarity magnetic field, perpendicular to the branded surface of the package face, increases the output voltage from its quiescent value toward the supply voltage rail. the amount of the output voltage increase is proportional to the magnitude of the magnetic field applied. conversely, the application of a north polarity field decreases the output voltage from its quiescent value. this proportionality is specified as the magnetic sensitivity, sens (mv/g), of the device, and it is defined as: v out(bpos) ? v out(bneg) bpos ? bneg sens = , (6) where bpos and bneg are two magnetic fields with opposite polarities. initial unprogrammed sensitivity ( sens init ) before any pro- gramming, sensitivity has a nominal value that depends on the sens_coarse bits setting. each a1363 variant has a different sens_coarse setting. sensitivity programming range (sens pr ) the magnetic sensi- tivity, sens, can be programmed around its initial value within the sensitivity range limits: sens pr (min) and sens pr (max). exceed- ing the specified sensitivity range will cause sensitivity drift through temperature range sens tc to deteriorate beyond the specified values. refer to the quiescent voltage output range section for a conceptual explanation of how value distributions and ranges are related. average fine sensitivity programming step size (step sens ) refer to the average quiescent voltage output programming step size section for a conceptual explanation. sensitivity programming resolution ( err pgsens ) refer to the quiescent voltage output programming resolution section for a conceptual explanation. sensitivity temperature coefficient (tc sens ) device sensi- tivity changes as temperature changes, with respect to its pro- grammed sensitivity temperature coefficient, tc sens . tc sens is programmed at 150c, and calculated relative to the nominal sensitivity programming temperature of 25c. tc sens (%/c) is defined as: sens t2 ? sens t1 sens t1 t2?t 1 1 tc sens = 100% , ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? (7) where t1 is the nominal sens programming temperature of 25c, and t2 is the tc sens programming temperature of 150c. the expected value of sens over the full ambient temperature range, sens expected(ta) , is defined as: sens t1 [ 100% + tc sens (t a ?t1)] sens expected(ta) = . (8) sens expected(ta) should be calculated using the actual measured values of sens t1 and tc sens rather than programming target values. sensitivity drift through temperature range (sens tc ) second order sensitivity temperature coefficient effects cause the magnetic sensitivity, sens, to drift from its expected value over the operating ambient temperature range, t a . the sensitivity drift through temperature range, ?sens tc , is defined as: sens ta ? sens expected(ta) sens expected(ta) ?sens tc = 100% . (9) sensitivity drift due to package hysteresis (sens pkg ) pack- age stress and relaxation can cause the device sensitivity at t a = 25c to change during and after temperature cycling. the sensi- tivity drift due to package hysteresis, ?sens pkg , is defined as: sens (25c)2 ? sens (25c)1 sens (25c)1 ?sens pkg = 100% , (10) low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
15 where sens (25c)1 is the programmed value of sensitivity at t a = 25c, and sens (25c)2 is the value of sensitivity at t a = 25c, after temperature cycling t a up to 150c and back to 25c. linearity sensitivity error (lin err ) the a1363 is designed to provide a linear output in response to a ramping applied magnetic field. consider two magnetic fields, b1 and b2. ideally, the sen- sitivity of a device is the same for both fields, for a given supply voltage and temperature. linearity error is present when there is a difference between the sensitivities measured at b1 and b2. linearity error is calculated separately for the positive (lin errpos ) and negative (lin errneg ) applied magnetic fields. linearity error (%) is measured and defined as: sens bpos2 sens bpos1 sens bneg2 sens bneg1 1? lin errpos = 100% , ? ? ? ? ? ? ? ? 1? lin errneg = 100% , ? ? ? ? ? ? ? ? (11) where: |v out(bx) ? v out(q) | b x sens bx = , (12) and bposx and bnegx are positive and negative magnetic fields, with respect to the quiescent voltage output such that |bpos2| = 2 |bpos1| and |bneg2| = 2 |bneg1|. then: lin err max( lin errpos , lin errneg ) = . (13) symmetry sensitivity error (sym err ) the magnetic sensitiv- ity of an a1363 device is constant for any two applied magnetic fields of equal magnitude and opposite polarities. symmetry error, sym err (%), is measured and defined as: sens bpos sens bneg 1? sym err = 100% , ? ? ? ? ? ? ? ? (14) where sens bx is as defined in equation 12, and bposx and bnegx are positive and negative magnetic fields such that |bposx| = |bnegx|. ratiometry error (rat err ) the a1363 device features ratio- metric output. this means that the quiescent voltage output, v out(q) , magnetic sensitivity, sens, and output voltage clamp, v clp(high) and v clp(low) , are proportional to the supply volt- age, v cc . in other words, when the supply voltage increases or decreases by a certain percentage, each characteristic also increases or decreases by the same percentage. error is the differ- ence between the measured change in the supply voltage relative to 5 v, and the measured change in each characteristic. the ratiometric error in quiescent voltage output, rat errvout(q) (%), for a given supply voltage, v cc , is defined as: v out(q)(vcc) / v out(q)(5v) v cc / 5 v 1? rat errvout(q) = 100% . ? ? ? ? ? ? ? ? (15) the ratiometric error in magnetic sensitivity, rat errsens (%), for a given supply voltage, v cc , is defined as: sens (vcc) / sens (5v) v cc / 5 v 1? rat errsens = 100% . ? ? ? ? ? ? ? ? (16) the ratiometric error in the clamp voltages, rat errclp (%), for a given supply voltage, v cc , is defined as: v clp(vcc) / v clp(5v) v cc / 5 v 1? rat errclp = 100% , ? ? ? ? ? ? ? ? (17) where v clp is either v clp(high) or v clp(low) . power-on reset voltage (v por ) on power-up, to initialize to a known state and avoid current spikes, the a1363 is held in reset state. the reset signal is disabled when v cc reaches v uvloh and time t porr has elapsed, allowing output voltage to go from a high impedance state into normal operation. during power-down, the reset signal is enabled when v cc reaches v porl , causing output voltage to go into a high impedance state. (note that detailed description of por and uvlo operation can be found in the functional description section). power-on reset release time (t porr ) when v cc rises to v porh , the power -on reset counter starts. the a1363 output voltage will transition from a high impedance state to normal operation only when the power-on reset counter has reached t porr and v cc has exceeded v uvloh . low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
16 undervoltage lockout threshold (v uvlo ) if v cc drops below v uvlol output voltage will be locked to gnd. if v cc starts rising a1363 will come out of lock state when v cc reaches v uvloh . uvlo enable/disable delay time (t uvlo ) when a falling v cc reaches v uvlol , time t uvloe is required to engage undervoltage lockout state. when v cc rises above v uvloh , time t uvlod is required to disable uvlo and have a valid output voltage. output saturation voltage (v sat ) when output voltage clamps are disabled, output voltage can swing to a maximum of v sat(high) and to a minimum of v sat(low) . broken wire voltage (v brk ) if the gnd pin is disconnected (broken wire event), output voltage will go to v brk(high) (if a load resistor is connected to vcc) or to v brk(low) (if a load resistor is connected to gnd). low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
17 functional description programming sensitivity and quiescent volt- age output sensitivity and v out(q) can be adjusted by programming sens_fine and qvo bits, as illustrated in figures 6 and 7. customers should not program sensitivity or v out(q) beyond the maximum or minimum programming ranges specified in the operating characteristics table. exceeding the specified limits will cause sensitivity and v out(q) drift through temperature range, sens tc and v out(q)tc , to deteriorate beyond the speci- fied values. programming sensitivity might cause a small drift in v out(q) . as a result, allegro recommends programming sensitivity first, then v out(q) . coarse sensitivity each a1363 variant is programmed to a different coarse sensitiv- ity setting. devices are tested and temperature compensation is factory programmed under that specific coarse sensitivity setting. if the coarse sensitivity setting is changed ,by programming sens_coarse bits, allegro can not guarantee the specified sensitivity drift through temperature range limits ,sens tc . memory locking mechanisms the a1363 is equipped with two distinct memory locking mecha- nisms: ? default lock at power-up, all registers of the a1363 are locked by default. eeprom and volatile memory cannot be read or written. to disable default lock, a very specific 30 bits customer access code has to be written to address 0x24 within access code time out, t acc = 8 ms, from power-up. at this point, registers can be accessed. if vcc is power cycled, the default lock will automatically be re-enabled. this ensures that during normal operation, memory content will not be altered due to unwanted glitches on vcc or the output pin. ? lock bit after eeprom has been programmed by the customer, the eelock bit can be set high and vcc power cycled to permanently disable the ability to read or write any register. this will prevent the ability to disable default lock using the method described above. please note that after eelock bit is set high and vcc pin power cycled, the customer will not have the ability to clear the eelock bit or to read/write any register. figure 6: device sensitivity versus sens_fine programmed value figure 7: device v out(q) versus qvo programmed value mid range sensitivity, sens (mv/g) sens_fine code qvo code quiescent voltage output, v out(q) (mv) 0 511 max specified sens pr 255 256 min specified sens pr specified sensitivity programming range mid range 0 511 max specified v out(q)pr v out(q)pr 255 256 min specified specified v out(q) programming range low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
18 power-on reset (por) and undervoltage lock-out (uvlo) operation the descriptions in this section assume: temperature = 25c, no output load (r l , c l ) , and no significant magnetic field is present. ? power-up at power-up, as v cc ramps up, the output is in a high impedance state. when v cc crosses v porh (location [1] in figure 8 and [1'] in figure 9), the por release counter starts counting for t porr . at this point, if v cc exceeds v uvloh [2'], the output will go to v cc / 2 after t uvlod [3']. if v cc does not exceed v uvloh [2], the output will stay in the high impedance state until v cc reaches v uvloh [3] and then will go to v cc / 2 after t uvlod [4]. ? v cc drops below v cc (min)= 4.5 v if v cc drops below v uvlol [4', 5], the uvlo enable counter starts counting. if v cc is still below v uvlol when counter reaches t uvloe , the uvlo function will be enabled and the ouput will be pulled near gnd [6]. if v cc exceeds v uvlol before the uvlo enable counter reaches t uvloe [5'] , the output will continue to be v cc / 2. t uvloe t porr t porr t uvlod 19 gnd a connecting vout to r l(pullup) vout a1363 vcc v cc v cc r l(pullup) gnd a vout a1363 vcc v cc r l(pulldwn) connecting vout to r l(pulldwn) gnd (recommended) vout a1363 vcc v+ c bypass c l figure 10:typical application drawing ? coming out of uvlo while uvlo is enabled [6] , if v cc exceeds v uvloh [7] , uvlo will be disabled after t uvlod , and the output will be v cc / 2 [8]. ? power-down as v cc ramps down below v uvlol [6, 9], the uvlo enable counter will start counting. if v cc is higher than v porl when the counter reaches t uvloe , the uvlo function will be enabled and the ouput will be pulled near gnd [10]. the output will enter a high impedance state as v cc goes below v porl [11]. if v cc falls below v porl before the uvlo enable counter reaches t uvloe , the output will transition directly into a high impedance state [7']. detecting broken ground wire if the gnd pin is disconnected, node a becoming open (figure 11), the vout pin will go to a high impedance state. output voltage will go to v brk(high) if a load resistor r l(pullup) is connected to v cc or to v brk(low) if a load resistor r l(pulldwn) is connected to gnd. the device will not respond to any applied magnetic field. if the ground wire is reconnected, a1363 will resume normal operation. figure 11: connections for detecting broken ground wire low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
20 chopper stabilization technique when using hall-effect technology, a limiting factor for total accuracy is the small signal voltage developed across the hall element. this voltage is disproportionally small relative to the offset that can be produced at the output of the hall sensor. this makes it difficult to process the signal while maintaining an accu- rate, reliable output over the specified operating temperature and voltage ranges. chopper stabilization is a unique approach used to minimize hall offset on the chip. the patented allegro technique removes key sources of the out- put drift induced by thermal and mechanical stresses. this offset reduction technique is based on a signal modulation-demodula- tion process. the undesired offset signal is separated from the magnetic field-induced signal in the frequency domain, through modulation. the subsequent demodulation acts as a modulation process for the offset, causing the magnetic field-induced signal to recover its original spectrum at base band, while the dc offset becomes a high-frequency signal. the magnetic-sourced signal then can pass through a low-pass filter, while the modulated dc offset is suppressed. this high-frequency operation allows a greater sampling rate, which results in higher accuracy and faster signal-processing capability. this approach desensitizes the chip to the effects of thermal and mechanical stresses, and produces devices that have extremely stable quiescent hall output volt- ages and precise recoverability after temperature cycling. this technique is made possible through the use of a bicmos pro- cess, which allows the use of low-offset, low-noise amplifiers in combination with high-density logic integration and a proprietary, dynamic notch filter. the new allegro filtering techniques are far more effective at suppressing chopper induced signal noise compared to the previous generation of allegro chopper stabi- lized devices. figure 12: concept of chopper stabilization am p r egu la to r clock/logic ha ll e lement tuned filter anti-aliasing lp filter low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
21 programming serial interface the a1363 incorporates a serial interface that allows an external controller to read and write registers in the eeprom and volatile memory. the a1363 uses a point-to-point communication pro- tocol, based on manchester encoding per g. e. thomas (a rising edge indicates 0 and a falling edge indicates 1), with address and data transmitted msb first. transaction types each transaction is initiated by a command from the controller; the a1363 does not initiate any transactions. three commands are recognized by the a1363: write access code, write, and read. one response frame type is generated by the a1363, read acknowledge. if the command is read, the a1363 responds by transmitting the requested data in a read acknowledge frame. if the command is any other type, the a1363 does not acknowledge. as shown in figure 13, the a1363 receives all commands via the vcc pin. it responds to read commands via the vout pin. this implementation of manchester encoding requires the communica- tion pulses be within a high (v man(h) ) and low (v man(l) ) range of voltages for the vcc line and the vout line. the write com- mand to eeprom is supported by two high voltage pulses on the vout line. writing the access code in order for the external controller to write or read from the a1363 memory during the current session, it must establish serial communication with the a1363 by sending a write command including the access code within access code time out, t acc , from power -up. if this deadline is missed, all write and read access is disabled until the next power-up. writing to volatile memory in order for the external controller to write to volatile memory, a write command must be transmitted on the vcc pin. succes- sive write commands to volatile memory must be separated by t write . the required sequence is shown in figure 14. figure 13. top level programming interface a1363 gnd o v ut vcc controller write/read command ? manchester code read acknowledge ? manchester code high voltage pulses to activate eeprom cells vcc t t write t write next command previous command write to register r# figure 14: writing to volatile memory low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
22 writing to eeprom in order for the external controller to write to non-volatile eeprom, a write command must be transmitted on the vcc pin. the controller must also send two programming pulses, long high-voltage strobes, via the vout pin. these strobes are detected internally, allowing the a1363 to boost the voltage on the eeprom gates. the required sequence is shown in figures 15 and 16. to ensure eeprom integrity over life time, eeprom should not be exposed to more than 100 write cycles. reading from eeprom or volatile memory in order for the external controller to read from eeprom or vol- atile memory, a read command must be transmitted on the vcc line. within time t start_read , the vout line will stop responding to the magnetic field and the read acknowledge frame will be transmitted on the vout line. the read acknowledge frame contains read data. after the read acknowledge frame has been received from the a1363, the vout line resumes normal operation after time t read . the required sequence is shown in figure 17. error checking the serial interface uses a cyclic redundancy check (crc) for data-bit error checking (synchronization bits are ignored during the check). the crc algorithm is based on the polynomial g(x) = x3 + x + 1 , and the calculation is represented graphically in figure 18. the trailing 3 bits of a message frame comprise the crc token. the crc is initialized at 111. if the serial interface receives a command with a crc error, the command is ignored. figure 15: writing to eeprom figure 16: eeprom programming pulses figure 17: reading from eeprom or volatile memory figure 18: crc calculation vcc normal operation normal operation high impedance eeprom programming pulses vout t write to register r# t write(e) t spulse(e) vout t vcc normal operation normal operation vout t t read t start_read read from register r# read acknowledge r# c1 c0 c2 input data 1x 0 1x 1 0x 2 1x 3 = x 3 + x + 1 low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
23 serial interface reference required timing parameters for successful serial communication with a1363 device are given in table below. table 1: required serial interface timing parameters characteristics symbol note min. typ. max. unit input/output signal timing access code time out t acc customer access code should be fully entered in less than t acc , measured from when v cc crosses v uvloh . C C 8 ms bit rate t bitr defined by the input message bit rate sent from the external controller 32 C 80 kbps bit time t bit data bit pulse width at 70 kbps 13.6 14.3 15 s bit time error err tbit deviation in t bit during one command frame C11 C + 11 % volatile memory write delay t write required delay from the trailing edge of certain write command frames to the leading edge of a following command frame 2 t bit C C s non-volatile memory write delay t write(e) required delay from the trailing edge of the second eeprom programming pulse to the leading edge of a following command frame 2 t bit C C s read acknowledge delay t read required delay from the trailing edge of a read acknowledge frame to the leading edge of a following command frame 2 t bit C C s read delay t start_read delay from the trailing edge of a read command frame to the leading edge of the read acknowledge frame 25 s C 0.25 t bit 50 s C0.25 t bit 150 s C 0.25 t bit s eeprom programming pulse eeprom programming pulse setup time t spulse(e) delay from last edge of write command to start of eeprom programming pulse 40 C C s input/output signal voltage manchester code high voltage v man(h) applied to vcc line 5.1 C C v read from vout line v cc C 0.2 v C C v manchester code low voltage v man(l) applied to vcc line C C 3.9 v read from vout line C C 0.2 v manchester level to vcc delay t man_vcc C C 15 s low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
24 serial interface message structure the general format of a command message frame is shown in figure 19. note that, in the manchester coding used, a bit value of one is indicated by a falling edge within the bit boundary, and a bit value of zero is indicated by a rising edge within the bit boundary. v cc levels during manchester communi- cation for all devices with uvlo functionality, after power-up it is important that the vcc pin be held at v cc until the first synchro- nization pulse of a read/write transaction is sent (see figure 20). during the transaction, the vcc pin varies between v man(h) and v man(l) , but right after the last crc bit has been sent, the controller must bring the vcc pin back to the v cc level in less than t man_vcc . this is important in order to avoid triggering the uvlo functionality during eeprom read/write. synchronize msb msb manchester code per g. e. thomas bit boundaries memory address data crc read/write 0 0 0/1 0/1 0/1 0/1 0/1 0/1 0 00 1 1 0/1 0/1 0/1 0/1 0/1 0/1 . . . 0/1 0/1 synchronize bit boundaries v cc v man(l) t man_vcc v man(h) 0 v memory address data crc read/write 0 0 0/1 0 0 0 1 0/1 figure 19: general format for serial interface commands figure 20: v cc levels during manchester communication table 2: serial interface command general format quantity of bits parameter name values description 2 synchronization 00 used to identify the beginning of a serial interface command 1 read/write 0 [as required] write operation 1 [as required] read operation 6 address 0/1 [read/write] register address (volatile memory or eeprom) 30 data 0/1 24 data bits and 6 ecc bits 3 crc 0/1 incorrect value indicates errors low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
25 read (controller to a1363) the fields for the read command are: ? sync (2 zero bits) ? read/w rite (1 bit, must be 1 for read) ? address (6 bits) - addr[5] is 0 for eeprom, 1 for register. ? crc (3 bits) figure 21 shows the sequence for a read command. synchronize msb read/write 0 0 1 memory address crc 0/10/1 0/1 0/1 0/1 0/1 0/1 0/1 0/1 figure 21: read sequence read acknowledge (a1363 to controller) the fields for the data return frame is: ? sync (2 zero bits) ? data (30 bits: [29:26] don t care, [25:24] ecc pass/fail, [23:0] data) ? crc (3 bits) figure 22 shows the sequence for a read acknowledge. refer to the detecting ecc error section for instructions on how to detect and ecc failure. synchronize msb data (30 bits) crc 0 0 0/1 0/1 0/1 0/1 . . . 0/1 0/1 0/1 0/1 0/1 figure 22: read acknowledge sequence write (controller to a1363) the fields for the write command are: ? sync (2 zero bits) ? read/w rite (1 bit, must be 0 for write) ? address (6 bits) - addr[5] is 0 for eeprom, 1 for register. refer to the address map. ? data (30 bits: [29:24] don t care, [23:0] data) ? crc (3 bits) figure 23 shows the sequence for a write command. bits [29:24] are dont care because the a1363 automatically generates 6 ecc bits based on the content of bits [23:0]. these ecc bits will be stored in eeprom at locations [29:24]. synchronize msb msb data (30 bits) read/write 0 0 0 memory address crc 0/10/1 0/1 0/1 0/1 0/1 0/1 0/1 0/1 . . . 0/1 0/1 0/1 0/1 figure 23: write sequence write access code (controller to a1363) the fields for the access code command are: ? sync (2 zero bits) ? read/w rite (1 bit, must be 0 for write) ? address (6 bits) (address 0x24 for customer access) ? data - 30 bits (0x2781_1f77 for customer access) ? crc (3 bits) figure 24 shows the sequence for a access code command. synchronize msb msb data (30 bits) read/write 0 0 0 memory address crc 01 0 1 0 0 0/1 0/1 0/1 . . . 0/1 0/1 0/1 0/1 figure 24: access code write sequence the controller has to open the serial communication with the a1363 device by sending an access code. it has to be sent within access code time out, t acc , from power-up or the device will be disabled for read and write access. table 3: access codes information name serial interface format register address (hex) data (hex) customer 0x24 0x2781_1f77 low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
26 eeprom cell organization programming coefficients are stored in non-volatile eeprom, which is separate from the digital subsystem, and accessed by the digital subsystem eeprom controller module. the eeprom is organized as 30 bit wide words, each word is made up of 24 data bits and 6 ecc (error checking and correction) check bits, stored as shown in table below. figure 25: eeprom word bit sequence; c# C check bit, d# C data bit 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 d14 d13 d12 d11 d10 d9 d8 d7 d6 d5 d4 d3 d2 d1 d0 eeprom bit 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 contents c5 c4 c3 c2 c1 c0 d23 d22 d21 d20 d19 d18 d17 d16 d15 table 4: memory address map register name address description r/w bits location customer access eeprom sens_fine 1 0x00 sensitivity, twos complement dac profile r/w 9 8:0 sens_coarse coarse sensitivity r/w 2 10:9 qvo 1 quiescent output voltage, twos complement dac profile r/w 9 19:11 (factory reserved) 2 factory reserved bit r/w 1 20 pol reverses output polarity r/w 1 21 clamp_dis clamp disable r/w 1 22 eelock eeprom lock w 1 23 id_c 3 0x01 customer reserved r/w 24 23:0 customer debug register (volatile memory) disable analog output 0x10 turns off the analog output for serial communications w 1 0 shadow enable enables register shadowing to bypass eeprom register 0x00 bits 22:0 w 1 1 1 9-bit twos complement integers, where the most positive number is indicated by code 255 (decimal) and the most negative number by code 256 (decimal). 2 customer should not write to this bit. 3 can be used to store any information required in the customers application. low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
27 table 5: eeprom ecc errors bits name description 29:26 C no meaning 25:24 ecc 00 = no error 01 = error detected and message corrected 10 = uncorrectable error 11 = no meaning 23:0 d[23:0] eprom data eeprom error checking and correction (ecc) hamming code methodology is implemented for eeprom checking and correction. the device has ecc enabled after power-up. the device always returns 30 bits. the message received from controller is analyzed by the device eeprom driver and ecc bits are added. the first 6 received bits from device to controller are dedicated to ecc. detecting ecc error if an uncorrectable error has occurred, bits 25:24 are set to 10, the vout pin will go to a high impedance state, and the device will not respond to the applied magnetic field. output voltage will go to v brk(high) if a load resistor r l(pullup) is connected to v cc or to v brk(low) if a load resistor r l(pulldwn) is connected to gnd. low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
28 figure 26: package lu, 8-pin tssop for reference only ? not for tooling use (reference mo-153 aa) not to scale dimensions in millimeters dimensions exclusive of mold ?ash, gate burrs, and dambar protrusions exact case and lead con?guration at supplier discretion within limits shown n y w standard branding reference view a 1.10 max 0.15 0.05 0.30 0.19 0.20 0.09 8o 0o 0.60 1.00 ref c seating plane c 0.10 8x 0.65 bsc 0.25 bsc +0.15 ?0.10 21 8 3.00 0.10 4.40 0.10 6.40 bsc gauge plane seating plane a b 6.10 0.65 0.45 1.70 8 21 b d d d branding scale and appearance at supplier discretion branded face c = last 3 digits of device part number = supplier emblem = last 2 digits of year of manufacture = week of manufacture e c 1.43 0.05 1.50 0.05 2 d e yyww nnn pcb layout reference view te rminal #1 mark area reference land pattern layout (reference ipc7351 sop65p640x110-8m); all pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet application process requirements and pcb layout tolerances; when mounting on a multilayer pcb, thermal vias can improve thermal dissipation (reference eia/jedec standard jesd51-5) hall element, not to scale active area depth 0.36 mm ref package outline drawing low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
29 for the latest version of this document, visit our website: www.allegromicro.com document revision history revision date change C january 24, 2014 initial release 1 september 3, 2014 revised selection guide 2 september 10, 2014 updated rat errsens limits 3 november 4, 2014 revised part numbers in selection guide 4 december 16, 2015 revised sensitivity drift through temperature range electrical characteristic and added footnote 20 copyright ?2015, allegro microsystems, llc allegro microsystems, llc reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. before placing an order, the user is cautioned to verify that the information being relied upon is current. allegros products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of allegros product can reasonably be expected to cause bodily harm. the information included herein is believed to be accurate and reliable. however, allegro microsystems, llc assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. low noise, high precision, programmable linear hall effect sensor ic with advanced temperature compensation and high bandwidth (120 khz) analog output a1363lu allegro microsystems, llc 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com

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